NPT1012B
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manufacturer:
MACOM
Description:
RF JFET Transistors DC-4.0GHz P1dB 43dBm Gain 13dB GaN
Category:
Electronic Semiconductors
Specifications
Transistor Polarity ::
N-Channel
Technology ::
GaN Si
Product Category ::
RF JFET Transistors
Mounting Style ::
Screw
Gain ::
13 DB
Transistor Type ::
HEMT
Pd - Power Dissipation ::
44 W
Maximum Operating Temperature ::
+ 200 C
Vds - Drain-Source Breakdown Voltage ::
100 V
Packaging ::
Tray
Id - Continuous Drain Current ::
4 MA
Vgs - Gate-Source Breakdown Voltage ::
3 V
Manufacturer ::
MACOM
Introduction
The NPT1012B,from MACOM,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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| Image | Part # | Description | |
|---|---|---|---|
|
|
MACOM Rf In Semiconductor MADP-007167-0287AT |
PIN Diodes Ls = 1.4nH SOT-23 Single Cp=.12pF
|
|
|
|
MADP-007433-12790T 1.5 Ohms RF Semiconductors 0.35 pF 75 V |
PIN Diodes Single L .6nH C .1pF
|
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