BA592E6327HTSA1 INFINEON NPN RF transistor

The BA592E6327 (part number BA592E6327HTSA1) is a standard RF PIN diode developed by Infineon Technologies, typically used for high-frequency switching and attenuation applications in RF circuits. Here are the complete technical specifications and applications based on the information available:

Key Specifications

1. Diode Type: Standard RF PIN Diode, suitable for high-frequency applications.
2. Peak Reverse Voltage (Max): 35V – the maximum voltage it can withstand in reverse bias.
3. Continuous Forward Current (If): 100 mA – the maximum continuous current it can carry in forward bias.
4. Forward Resistance (Rf): 0.45 Ω (typical at 3 mA) – this low resistance allows efficient RF switching with minimal signal loss.
5. Capacitance (Cj): 1.1 pF (at Vr = 1V, f = 1 MHz) – low capacitance helps reduce signal distortion in high-frequency applications.
6. Package: SOD-323 (PG-SOD323-3D) – a small, surface-mount package, suited for space-constrained applications.
7. Power Dissipation (Ptot): 250 mW – the maximum power it can dissipate under specified conditions.
8. Operating Temperature Range: -55°C to +150°C – ensures reliable operation across a wide temperature range.
9. Application Areas: RF switching and tuning applications, particularly in TV tuners, mobile communications, and other RF signal control circuits.
10. Compliance: RoHS Compliant – environmentally friendly, following safety standards.

Applications

The BA592E6327 is ideal for:

• TV and Video Tuning Circuits: Used for signal selection and tuning in television and video devices.
• Mobile and Wireless Communication Systems: Provides efficient RF signal control with minimal interference.
• RF Switches and Attenuators: Commonly used in circuits requiring reliable, low-noise signal switching and attenuation.