ADI / Analog Devices Inc. AD5541CRZ-REEL7
Specifications
Frequency Range:
6 GHz To 9.5 GHz
Gain:
21 DB (typical)
Power Added Efficiency (PAE):
23% At Maximum Output Power
Drain Supply Voltage (Vdd):
+7V (typical)
Supply Current:
820 MA At 7V
Input Return Loss:
15 DB (typical)
Output Third-Order Intercept (OIP3):
+42 DBm (typical)
Introduction
The HMC590LP5E is a high-performance GaAs pHEMT MMIC (Monolithic Microwave Integrated Circuit) power amplifier designed by Analog Devices for applications in the frequency range of 6 GHz to 9.5 GHz. Below is a complete summary of its key specifications and features:
Key Specifications:
- Frequency Range: 6 GHz to 9.5 GHz.
- Output Power:
- P1dB (1 dB compression point): +29 dBm.
- Saturated Output Power (Psat): +31 dBm (1 watt).
- Gain: 21 dB (typical).
- Power Added Efficiency (PAE): 23% at maximum output power.
- Drain Supply Voltage (Vdd): +7V (typical).
- Supply Current: 820 mA at 7V.
- Input Return Loss: 15 dB (typical).
- Output Third-Order Intercept (OIP3): +42 dBm (typical).
- Package Type: 32-lead QFN (5 mm x 5 mm) for surface mount applications.
- Operating Temperature Range: -55°C to +85°C.
Features:
- Integrated 50Ω I/O Matching: Simplifies system design by eliminating external matching components.
- High Linearity: Ensures reliable performance in applications requiring low distortion.
- Robust Design: Withstands ±200V ESD (HBM) and supports high thermal dissipation.
Applications:
- Microwave Radios and Point-to-Point Links: Enhances long-range communication with high output power and low noise.
- Military and Aerospace Systems: Suitable for radar and secure communication systems.
- Instrumentation: Used in RF test equipment requiring precision and power.
Advantages:
- Compact Design: Ideal for space-constrained RF circuits.
- Efficient Performance: Offers high gain and output power with excellent thermal management.
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